摘要
We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
We report on the measurement of junction temperature of the InAs/InP（l00） quantum dot lasers working in the 1.55μm wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20℃ junction temperature rise is measured for the quantum-dot （QD） laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3℃. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
基金
Supported by the National Natural Foundation of China under Grant Nos 61204058 and 61021064
the Natural Foundation of Guangdong Province under Grant No S2013010011833
the Foundation of Shenzhen Innovation Program under Grant No JCYJ20130401095559823
