X光二极管脉冲偏压施加技术

Pulsed bias application on X-ray diodes

为了满足充气腔实验对探测器安全性能的要求,开展了X光二极管的脉冲偏压施加技术的初步研究。在8ps激光装置上,设计了一种新的基于信号发生器的同步方法,完成了X光二极管脉冲偏压加载工作方式的技术验证。脉冲偏压与直流偏压条件下,探测器上升时间与半高宽变化值不超过10%。脉冲偏压源主要指标确定为脉宽110μs,激光打靶零后2.11ms完成偏压卸载。

With the safety requirements of detectors in the gas hohlraum experiments,a technique of pulsed bias application on X-ray diodes is studied preliminarily.A new synchronization method is presented based on the signal generator and the 8ps laser equipment.And the technology of X-ray diodes with pulsed bias is proved by experiments on the laser equipment.The differences of rising time and FWHM between the detector with DC and pulsed bias voltage are no more than 10%.Temporal performances of X-ray diodes with pulsed bias are in agreement with one of diodes with DC bias.The results show that application of pulsed bias on X-Ray Diodes is technically feasible.The main requirements of pulsed high-voltage power,is given at the end.The pulse width should be 110μs and the time when the voltage is unloaded should be 2.11 ns after zero time.