摘要
本文简要比较了下SiC Mosfet管和Si IGBT管的部分电气性能参数并分析了这些电气参数对电路设计的影响,并且根据SiC Mosfet管开关特性和高压高频的应用环境特点,推荐了金升阳可简化设计隔离驱动电路的SIC驱动电源模块。
This article briefly compare partial electronic performance parameter of SiC Mosfet pipe and Si IGBT pipe and analyze how those electronic parameter affect the circuit design, and recommend SIC drive power module of simplified design isolated drive circuit according to thapplication environment quality of SiC Mosfet specifications and high voltage and frequency.
出处
《变频器世界》
2015年第2期94-96,共3页
The World of Inverters