硅材料微细电化学铣削技术研究

Research on micro electrochemical milling of silicon material

电化学加工是硅微细加工技术中的一种常用方法,但是直接用于三维加工比较困难,因此提出一种新的硅材料微细电化学铣削加工方法。该方法将电化学加工和铣削加工工艺结合起来,通过电化学加工技术能够实现材料的微量去除,而铣削加工工艺则能够实现三维加工。它利用硅在氢氧化钠溶液中的钝化作用,减少电化学杂散腐蚀。利用加工间隙的电火花放电对钝化膜的破坏作用,限制加工区域。实验表明,微细电化学铣削硅技术能够有效地减少杂散腐蚀,提高加工定域性,能够将电化学杂散腐蚀范围限制在10μm以内,该方法可用于硅的微细三维铣削加工。

Electrochemical machining is a common method of silicon micromachining,but it is difficult to be used directly for three-dimensional processing. Therefore,a new silicon microelectrochemical milling method is proposed,combining electrochemical machining and milling processes technology. Microelectrochemical machining can remove material,and the milling process can achieve three-dimensional processing. By making use of passivation of silicon in sodium hydroxide solution,stray electrochemical corrosion can be reduced. Electrical discharge in machining gap will break down the passive film,limiting the processing area. Experiments show that microelectrochemical milling of silicon technology can effectively reduce stray corrosion,improve the processing locality,and limit the scope of stray electrochemical corrosion within 10μm. This method can be used in the three-dimensional micro-milling of silicon.