硅的反应离子刻蚀实验研究

Experimental Research on the Reactive Ion Etching of Silicon

采用SF6和O2为刻蚀气体,在275m(torr)的反应压力下对硅进行了反应离子刻蚀实验研究。通过不断调节射频功率、刻蚀气体的流量等系列对比实验,研究、探索并优化了对硅的反应离子刻蚀工艺条件。实验研究得出的最优化条件:射频功率为120W,SF6和O2的流量为36cm3/s和6cm3/s。在该工艺条件下获得三个重要的刻蚀参数:刻蚀速率为1036nm/min,对氧化物的选择比为56.6,均匀性为4.41。

Reactive ion etching（ RIE） of silicon was performed with SF6＋ O2 as etching gas under the reaction pressure of 275 m（ torr）. Through changing the Radio- Frequency（ RF） power and the etching gas flow rate,we study and optimize the reactive ion etching process conditions. The RF power at 120 W and the flow rate of SF6 and O2at 36 sccm and 6 sccm were identified as the optimized etching conditions. Under the conditions,the most important etching parameters were obtained with the etching rate as 1036 nm /min,the selectivity to oxide as 56. 6 and the uniformity as 4. 41