摘要
In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and（2.2-2.4）×10^15 cm^-3 doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity VR can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is VF=0.71 V at forward current If =3 A.
In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and（2.2-2.4）×10^15 cm^-3 doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity VR can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is VF=0.71 V at forward current If =3 A.
基金
Project supported by the National Natural Science Foundation of China(No.61366006)
the Research Projects of Higher Education,Gansu’s Ministry of Education(No.213019)
the Fundamental Research Funds for Gansu Provincial Finance Department(No.213048)
