砷化镓材料技术发展及需求

GaAs Materials:A Review of Technological Development and Market Demands

介绍了HB、LEC、FEC、VCZ、VB、VGF砷化镓单晶炉及生长技术,分析了各种生长技术的优缺点及发展趋势。HB砷化镓多晶合成和单晶生长可以同时完成,生长温度梯度小、位错小、应力小;其缺点为不易生长半绝缘砷化镓单晶材料。LEC法生长过程可见,成晶情况可控,可生长大尺寸、长单晶;其缺点是晶体温度梯度大、位错密度高、应力高、晶体等径控制差。VB/VGF法生长出的单晶位错密度和残留应力比LEC法低,晶体等径好,适合规模生产;其缺点在于容易产生双晶、线性缺陷和花晶,过于依赖生长系统重复性和稳定性。

The paper introduces HB, LEC, FEC, VCZ, VB, VGF GaAs single crystal furnaces and crystal growth technologies. Both advantages and disadvantages of these growth technologies were analyzed. HB GaAs polycrystalline synthesis and single crystal growth can be completed at the same time with advantages of small growth temperature gradient, small dislocation and small stress and disadvantages of difficulties in the growth of semi-insulating GaAs single crystal materials. LEC-grown process is visible and can grow large and long crystals. The process has drawbacks such as large temperature gradient, high dislocation density, high stress and poor control of crystal size. VB/VGF method can grow single crystals with lower dislocation density and residual stress than the LEC method and is suitable for mass production. However, it is prone to twinning, linear defects and crystal flower and the single crystal growth highly relies on repeatability and stability of the system.