摘要
对比惠普实验室提出的忆阻物理模型,采用压控型双曲函数忆阻模型在Simulink环境下实现双端建模,并通过仿真验证了模型的正确性。同时讨论了模型中控制参数对电流电压迟滞曲线特性的影响,通过改变控制参数,此忆阻模型可以适用于在高频环境下与其它器件结合组成忆阻应用电路中,开阔了忆阻的应用范围,为忆阻实现具体的应用提供了模型基础。
Comparing to the physical model of memristor put forward by the HP laboratory,this paper adopt the voltage-controlled memristor with hyperbolic function and make a implementation for the dual-model in simulink environment,and the validity of the model is verified by simulation. also discussed the characteristic of i-v hysteresis curve influenced by the control parameters in the model,once we change the control parameters the model can be applied to under the environment of high frequency and make a combination with other electrical elements to accomplish variety of applications. it widen the range of memristor application and provide a basis for the circuit of memristor application.
出处
《太原科技大学学报》
2015年第1期23-27,共5页
Journal of Taiyuan University of Science and Technology
基金
山西省教学改革项目(20120326)
太原科技大学UIT计划项目(xj2013005)
