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反应磁控溅射法制备Zn_3N_2薄膜的工艺研究

Technical study on Zn_3N_2 thin film prepared by reactive magnetron sputtering
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摘要 制备和研究高质量的Zn3N2薄膜有助于拓展新型薄膜材料体系。文章采用反应磁控溅射技术,研究不同的溅射功率、N2-Ar流量比、衬底类型和衬底温度等沉膜工艺对Zn3N2薄膜结晶质量的影响;采用XRD、SEM和AFM等测试手段,分析Zn3N2薄膜的微结构和表面形貌。结果表明:几种衬底上,以石英玻璃作衬底沉积的Zn3N2薄膜晶粒尺寸较大,衍射峰较强,且为多晶向薄膜;当N2-Ar流量比提高时,Zn3N2薄膜为单一择优取向的结晶薄膜;衬底温度升高后,Zn3N2薄膜晶粒尺寸减小,但是单一择优取向不变;溅射功率提高后,薄膜晶粒尺寸增大,择优取向改变,由单一晶向变为多晶向,以<100>晶向单晶硅作衬底可获得单一晶向Zn3N2薄膜,而以<111>单晶硅作衬底制备的Zn3N2薄膜经XRD测试,未检测到Zn3N2晶体。 Research and preparation of high quality Zn3N2 thin film contributes to the expansion of new thin film materials system. Magnetron sputtering was employed to deposit Zn3N2 thin film under the varied sputtering powers,N2-Ar gases flow rates,substrate types and temperatures. The samples were investigated by XRD,SEM and AFM. It shows that Zn3N2 thin film deposited on the quartz glass turns to have greater grain size and stronger diffraction peak with the increased N2-Ar gases flow rate.When substrate temperature arises,the grain size of Zn3N2 thin film decreases,but the film is still crystal having one preferred orientation. When sputtering power increases,the film structure turns to be polycrystalline. The structure of Zn3N2 thin film deposited on the single crystal silicon substrate of 〈100〉 crystal orientation are single-crystal. Zn3N2 thin film which deposited on the single crystal silicon substrate of 〈111〉 crystal orientation are non-crystal.
出处 《山东建筑大学学报》 2015年第1期47-52,共6页 Journal of Shandong Jianzhu University
基金 济南市科技局项目(OUT_02440)
关键词 磁控溅射技术 Zn3N2薄膜 衬底 择优取向 magnetron sputtering technology Zn3N2thin film substrate preferred orientation
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参考文献13

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