低速率沉积非晶硅薄膜钝化Cz-Si片的研究

PASSIVATION OF Cz-Si WAFERS WITH a-Si：H FILMS DEPOSITED AT LOW RATE

采用PECVD法在低沉积速率(<1?/s)条件下制备非晶硅,双面钝化n型Cz硅片(40 mm×40 mm),钝化最好的硅片平均少子寿命值为889μs,局部最高近1600μs,用准稳态光电导法测试的平均伪开路电压i Voc达722 m V。对FTIR测试结果分析表明:非晶硅薄膜中的Si H2与Si H键的相对数量对钝化效果具有重要影响。

In this paper, i a-Si ： H films at low deposition rates by PECVD method are used to bifacially passivate n-type Cz-Si wafers（40 mm×40 mm）. The average value of the lifetime of the best passivated wafer is 889 μs, local maximum of nearly 1600 μs. The average implied Voc of the best passivated wafer is 722 mV. It is found that the ratio of the SiH2/SiH bonds of the i a-Si ： H films has great effect on the passivation effect from the analysis of the FTIR spectra.