超浅结亚45nm MOSFET亚阈值区二维电势模型

A 2-D Potential Sub-Threshold Model for Sub-45nm MOSFETs with Ultra Shallow Junctions

文章提出将亚阈值区超浅结MOSFET的氧化层和Si衬底划分为三个区域,得到三个区域的定解问题,并用特征函数展开法求出了因边界衔接条件而产生的未知系数,首次得到超浅结亚45nm MOSFET的二维电势半解析模型,并给出了亚阈值电流模型.通过与Medici模拟结果对比发现该模型能够准确模拟亚阈值下的超浅结15~45nm MOSFET的二维电势和电流.

Three definite-solutions problems,w hich are divided from the oxide layer and Si substrate for ultra shallow junctions M OSFETs,are presented. A 2-D potential analytical model for the Sub-45 nm M OSFETs w ith ultra shallow junctions,w hich the unknow ns can be solved by the eigenfunctions expansion from the connected condition identity,is derived.The sub-threshold current model is also presented. According to the comparison w ith M EDICI,the model can accurately simulate the sub-threshold 2-D potential and current of USJs 15-45 nm M OSFETs.