一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0. 18-μm CMOS Technology

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC 0.18-μm CMOS工艺设计并制造,芯片总面积为1.67mm2.测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2d B至4d B,其本振到中频端口和射频到中频端口间的隔离度均大于50d B.整个电路的直流功耗小于32m W.

An ultra-broadband millimeter wave mixer using 0. 18-μm CMOS process is presented in this paper. To achieve better operation bandwidth,a uniform distributed topology is utilized for wideband matching. To enhance the conversion gain of the mixer,an IF power combining amplifier is proposed and implemented in this mixer design. The mixer achieves a wide measured conversion gain of- 0. 2d B—4d B from 8 to 40 GHz. With the low-pass filter,the mixer exhibits excellent LO-to-IF and RF-to-IF isolation which are both better than 50 d B. The DC power consumption of the IF amplifier is less than 32 m W.