硅基MEMS红外光源制造及其辐射特性研究

Study on silicon- based MEMS infrared source fabrication and its radiation characteristics

结合现有微机电系统（MEMS）制造工艺加工设计了一种新型的硅基MEMS红外辐射光源,该光源采用辐射功能层悬浮结构,主要包括微米量级多晶硅辐射层、重掺杂单晶硅反射层、二氧化硅保护层、支撑层和金属电极层;采用硼离子注入技术对多晶硅辐射层进行掺杂改性,实现多晶硅辐射层良好的电阻加热和体辐射效应;采用光谱辐射计对MEMS红外光源辐射光谱进行测试,显示光谱辐射波段为2~14μm;光源驱动电压为5.8 V时,电光转化效率达9.76%,光源开启时间约为20 ms,关断时间约为10 ms,总驱动响应时间为30 ms。

A kind of silicon- based MEMS infrared radiation light source was developed combining with the existing manufacturing process of microelectromechanical system（ MEMS）. Suspension structure was adopted for the luminescent thin film of the light source,and it is mainly composed of micron- sized polycrystalline silicon radiating layer,heavy doped monocrystalline silicon reflecting layer,silicon dioxide protective coating,support layer and metal electrodes. Polycrystalline silicon radiating layer was modified through boron ion implantation,and good resistance heating and radiation effect of the polycrystalline silicon radiating layer were achieved. A spectroradiometer was used for testing the radiation spectrum of infrared light source,and its radiation spectrum ranging from 2 to 14 μm was obtained.When driving voltage of light source is 5. 8 V,the photoelectric conversion efficiency is 9. 76%. Turn- on time of the light source is 20 ms,and turn- off time is about 10 ms,so the total drive time is 30 ms.