摘要
通过辐射伏特效应,研究硅基P-N结微型同位素电池的电输出理论模型.根据该模型,用Matlab编写程序模拟尺寸为1 mm×1 mm的硅基微型同位素电池在3.7×107Bq63Ni放射源照射下的电输出,并用该模型仿真硅基微电池的短路电流Isc、开路电压Voc和最大输出功率Pmax与掺杂浓度的关系.仿真结果表明,开路电压随着掺杂浓度的增加而增大,而短路电流则随着掺杂浓度的增大而减小.同时,获得了电池具有最大输出功率密度时的最优化掺杂浓度参数,最大输出功率的P区、N区最优化掺杂浓度值各为1×1020cm-3和1×1015cm-3.
This paper studied a theoretical model of Si-based P-N junction isotope microbattery's output by the Betavohaic effect. According to the model, electrical output performance of a 1 mm x 1 mm Si-based isotope microbattery under the irradiation of a 3.7 ×107 Bq 63Ni source was simulated using Matlab, and Iso, Voe, Pmax were also simulated using the model. The results showed that the open circuit was increasing with doping concentration, and the short circuit current was decreasing with doping concentration. The optimal doping concentrations of P and N area for maximum output power were 1 × 10 20 cm-s and 1×10 15 cm-3.
出处
《厦门理工学院学报》
2015年第1期62-66,共5页
Journal of Xiamen University of Technology
基金
福建省自然科学基金项目(2013J05104)
福建省教育厅科技项目(JA12258)
厦门理工学院国家自然科学基金预研项目(XYK201452)