p-AlGaN/GaN超晶格做p型层350nm紫外AlGaN基LED

350 nm Al Ga N- based Ultraviolet Light- Emitting- Diode Using p-AlGaN/GaN Superlattice

使用p-Al Ga N/p-Ga N SPSLs作为LED的p型层,在蓝宝石衬底上生长出发光波长为350 nm的Al Ga N基紫外LED。由于Al Ga N/Ga N超晶格的极化效应,使得Mg受主的电离能降低,大幅提高了器件的光学和电学性能。在工作电流为350 m A下发光亮度达到了22.66 m W,相应的工作电压为3.75 V,LEDs的光功率满足了实际应用需求。

By using p-A1GaN/GaN SPSLs as the p-layer of LED, the peak wavelength of 350 nm A1GaN basedUVLED is grown on the sapphire substrate. The A1GaN/GaN superlattiee polarization reduces the Mg acceptor ioni-zation, thus greatly improving the LED devices optical and electrical properties. The devices exhibit an output powerof 22.66 mW at the current of 350 mA, corresponding to a low forward voltage of only 3.75 V. It means that the op-tical power of such LEDs is high enough to be used in practical applications.