摘要
In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85 × 10^- 6 W.Hz^-1/2 and 2.1 × 10^11 cm.Hz^1/2w^-1, respectively.
In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85 × 10^- 6 W.Hz^-1/2 and 2.1 × 10^11 cm.Hz^1/2w^-1, respectively.
