Cu掺杂对ZnO纳米薄膜结构及物性的影响

The effects of Cu-doping on the crystal structure and physical character of ZnO nano-film

利用溶胶-凝胶法制备了Cu掺杂Zn O纳米晶体薄膜,通过XRD、TEM、AFM、UV-VLS和VSM对其晶体结构、表面形貌、透光性、禁带宽度和磁性进行了表征和分析。结果表明,所有样品都具有c轴择优生长取向,Cu掺杂没有改变Zn O晶体的纤锌矿结构,即没有检测到任何非晶态产物以及各种第二相的存在,表明Cu2+已经取代Zn2+融入了晶体。但是,Cu的掺杂浓度以及煅烧温度的变化,改善了薄膜的粗糙度、晶粒度、透光率、禁带宽度及室温铁磁性。在所有样品中,掺杂浓度为2%、煅烧温度为500℃的薄膜粗糙度、晶粒度最小而透光性和室温铁磁性最强。样品的能隙则是随着Cu掺杂浓度和煅烧温度的提高而变小。

Cu-doping Zn O nano-films were prepared by a sol-gel technique. The crystal structures,surface morphology,transmittance,band gap and room magnetism were characterized and analyzed by X-ray diffraction( XRD),transmission electron microscopy( TEM),atomic force microscope( AFM),ultraviolet visible spectroscopy( UV-Vis),and vibrating sample magnetometer( VSM). The results show that the films exhibit a hexagonal structure,showing a preferential growth along c axis. Any amorphous material or secondary phase was not inspected in all synthesized samples. It indicate that Zn2 +was substituted by Cu2 +in the crystal film. The roughness,the grain size,the transmittance,band gap and room magnetism of the films are improved by the changes of Cu consistence and sintering temperature. The sample of 2%Cu-doping sintered at 500 ℃ has the least roughness and grain sizes,and has the most transmittance and room temperature ferromagnetism. But the band gap decreases with the increase of Cu consistence and sintering temperature.