自旋转移力矩磁隧道结的建模与仿真

Modeling and Simulation of Spin-Torque-Transfer Magnetic Tunnel Junction

自旋转移力矩磁隧道结(STT-MTJ)是一种新兴的非易失性存储单元。因为有着掉电后数据不丢失、无限的写次数、与CMOS工艺兼容、不会增加器件面积以及良好的可缩放性等诸如多优点而得到了广泛的研究。但是由于目前的工艺厂商尚未推出相应的模型,研究者难以先期使用该技术进行电路设计。文章介绍了STT-MTJ的工作原理,详细研究了使用Verilog-A对STT-MTJ建模的思路,并在HSPICE中进行了仿真验证,为后续的STT-MTJ研究奠定了基础。

Spin-Torque-Transfer Magnetic Tunnel Junction is one of the new emerging non-volatile memory elements. Due to its advantages of non-volatility, infinite endurance, compatibility with CMOS, no area overhead, and good scalability, it is widely researched. However, because the process using STT-MTJ has not been commercial and there is no models provided by manufacturers, researchers are harder to design circuit using STT-MTJ. The paper introduces the working principle of STT-MTJ, studies the modeling idea of STT-MTJ using Verilog-A, and simulates the proposed model using HSPICE. The proposed model can be used for STT-MTJ circuit design in the future.