氢气浓度对掺氮超纳米金刚石薄膜的影响

Influence of H_2 Concentration on Nitrogen-doped Ultra-nanocrystalline Diamond Thin Films

采用微波等离子体化学气相沉积法,以甲烷和氮气为气源,通过改变反应气体中氢气的浓度,在硅衬底上沉积出掺杂氮的超纳米金刚石膜。并利用扫描电子显微镜,拉曼光谱仪,X射线衍射仪,霍尔效应测试仪分别对掺杂氮的超纳米金刚石膜的表面形貌,组成结构及导电性能进行了进行表征,重点研究了氢气浓度对薄膜特性的影响。结果表明:随着氢气浓度的增加,薄膜的晶粒尺寸逐渐增大;薄膜的质量提高,且由G峰漂移引起的压应力逐渐减小;薄膜导电性变差。

Nitrogen-doped uhra-nanocrystalline diamond thin films deposited on Si substrate with different H_2 concentration by microwave plasma chemical vapor deposition （MPCVD） using CH_4/N_2 as gas resource. The surface morphology, composition, structure, and electrical conductivity of prepared films were characterized through SEM, Raman, XRD and Hall system testing in which mainly studies on the effect of hydrogen concentration on the films feature. The results demonstrate that as the HE concentration increasing, the crystalline size and the diamond phase purity increases, and the compressive stress influenced by the shift of the Raman G-peak increases obviously. Further, the electrical conductivity of the films become worse.