双坩埚三维温度梯度法蓝宝石晶体生长炉设计

Design of Double Crucible 3DGF Sapphire Crystal Growth Furnace

在已有的三维温度梯度法(3DGF)蓝宝石晶体生长炉基础上,设计了一种双坩埚蓝宝石晶体生长炉。设计的三维温度梯度法蓝宝石晶体生长炉主要针对蓝宝石手机面板市场,将坩埚设计成长方体型,增加了材料利用率,并简化了晶体切割工艺。采用双坩埚技术,可进一步提高晶体的生产效率,节约能耗,降低成本。本设计的双坩埚3DGF蓝宝石晶体生长炉可单炉获得2个300 mm×100 mm×100 mm的蓝宝石晶体。

Based on existing three-dimensional temperature gradient method （3DGF）, a double crucible sapphire crystal growing furnace were designed. The three-dimension temperature gradient method of sapphire crystal growth furnace mainly aimed at the sapphire market, mobile phone panel designed to grow the crucible size, increased the utilization rate of materials, and simplify the crystal cutting process. We adopt double crucible technique, can further improve the production efficiency of crystal, save energy, reduce the cost. The design of the crucible 3-DGF sapphire crystal growth furnace can be single furnace by two 300 mm × 100 mm × 100 mm sapphire crystal.