摘要
采用真空坩埚下降法生长了白色发光二极管(LED)用Ce:YAG晶体,该生长方法所得晶体的Ce3+掺杂浓度较高,相对色温(3 751K)低于传统方法所生长的Ce:YAG晶体,其激发峰是位于460nm左右的宽峰,与蓝光LED的发射波长相匹配,有望代替黄色荧光粉用于白光LED.随驱动电流增加,白光LED的发光效率逐渐降低,相对色温几乎不变.在100mA时,白光LED显色指数达到最大值.
Ce：YAG single crystals used for white light-emitting diode（LED） were grown by the Bridgman method, it had higher Cea＋-doped concentration and lower relative color temperature（3 751 K）, comparing with those of grown by traditional method. Its excitation peak was located in broad band around 460 nm matching the emission wavelength of blue light LED. It was expected to replace the yellow phosphor for white LED. With the increase of drive current, the luminous efficiency of white LED was gradually reduced and the relative color temperature remained almost constant. In 100 mA, the white LED color rendering index attained the maximum value.
出处
《上海应用技术学院学报（自然科学版）》
2015年第1期59-62,78,共5页
Journal of Shanghai Institute of Technology: Natural Science
基金
上海市自然科学基金资助项目(12ZR1430900)
上海市基础研究重点资助项目(11JC1412400)
关键词
掺钕钇铝石榴石
Ce3+
晶体生长
光谱性能
白色发光二极管
yttrium aluminum garnet（YAG）
Ce3＋
crystal growth
spectroscopic properties
white light-emitting diode（LED）
