磁控溅射法制备ZnO:Ga薄膜的结晶质量及其应力研究

The Crystal Quality and Residual Stress of ZnO: Ga Thin Films Prepared by Magnetron Sputtering Method

以氧化锌(Zn O)掺杂氧化镓(Ga2O3)的陶瓷靶作为溅射靶材,采用射频磁控溅射技术在玻璃衬底上制备了透明导电的掺镓氧化锌(Zn O:Ga)薄膜.通过X射线衍射仪测试研究了衬底温度对薄膜结晶性能及其残余应力的影响.研究结果表明:所有Zn O:Ga薄膜均为六角纤锌矿型的多晶结构并具有(002)方向的择优取向特性,其结晶性能和残余应力与衬底温度密切相关.随着衬底温度的升高,薄膜的(002)择优取向程度和晶粒尺寸呈现出先增大后减小的变化趋势,而薄膜的残余压应力则单调减小.当衬底温度为400℃时,Zn O:Ga薄膜具有最大的晶粒尺寸(75.1 nm)、最大的织构系数TC(002)(2.995)、较小的压应力(-0.185 GPa)和最好的结晶性能.

The gallium-doped zinc oxide（ Zn O： Ga） thin films were prepared on glass substrates by magnetron sputtering method using the ceramic target fabricated by sintering the mixture of Zn O and Ga2O3 nanometer powder. The substrate temperature was varied from 200 ℃ to 500 ℃ during the magnetron sputtering process. The crystal quality and residual stress of the deposited films were investigated by X-ray diffractometer. The results indicated that the crystal quality and residual stress of the samples are closely related to the substrate temperature. As the substrate temperature increasing,the degree of preferred orientation,average grain size and residual stress of the samples change nonmonotonically. The thin film deposited at the substrate temperature of 400 ℃ has the largest grain size（ 75. 1 nm）,the maximum texture coefficient TC（ 002）（ 2. 995）,the lower compressive stress（-0. 185 GPa） and the best crystal quality.