摘要
采用三维平面波法和三维有限时域差分法,研究了硅基单模狭缝波导的双偏振特性.通过调节狭缝波导中硅介质的宽度,获得了宽达320.6 nm的双偏振带宽;并且发现在该带宽范围内,准TE模式的电场强度在狭缝中均具有增强效果,并且狭缝中光限制因子均大于60%.该研究结果可为设计其他与偏振相关的硅光子器件提供参考.
Wideband dual polarizations single mode characteristics of silicon slot waveguide is investigated by three dimensional plane-wave expansion method and three dimensional finite difference time domain method. By tuning the width of the surrounding silicon region of the slot waveguides,320. 6 nm wide bandwidth for both quasi-TE and quasi-TM modes can be obtained in an optimized structure,and electric field enhanced in the low index slot zone for quasi-TE fundamental modes is also observed for the whole bandwidth. The investigation proposed in this paper would be served as a basis for designing polarization related silicon photonics devices.
出处
《中南民族大学学报（自然科学版）》
CAS
北大核心
2015年第1期79-82,共4页
Journal of South-Central University for Nationalities：Natural Science Edition
基金
国家自然科学基金资助项目(11147014&11491240105)
湖北省自然科学基金资助项目(2013CFA052)
关键词
宽带
偏振
狭缝波导
wideband
polarization
slot waveguide
