环境温度对单晶锗片低温抛光去除率的影响研究

Research on the Influence of Ambient Temperature on Material Removal Rate of Germanium Wafer in Low Temperature Polishing

在分析了单晶锗片低温抛光工艺的基础上,进行了四种不同参数的单晶锗片低温抛光实验。分析了不同温度条件下,单晶锗片去除速率的变化原因,提出了基于醚类辅助抛光液的自锐型低温抛光工艺,为冰冻固结磨料抛光单晶锗片的研究开辟了新途径。结果表明:环境温度对冰冻固结磨料抛光盘表层融化速率影响显著,10℃时即会导致融化过快;抛光区域摩擦产生的热量小于环境温度-10℃时的对流换热,会导致冰盘表面二次凝固;环境温度-10℃时加入醚类辅助抛光液可实现冰盘在低温下的自锐性。

Based on the analysis of low temperature polishing process of germanium wafer, low temperature polishing experiments were done with four different parameters. The reasons for changes in material removal rate（ MRR） of germanium wafer were analyzed under different temperature conditions.A self-sharpening low temperature polishing process was proposed based on assisted slurry of ethers. A new avenue was developed for ice-fixed abrasive polishing on germanium wafer by the research. The results show that： the melting rate of ice-fixed abrasive polishing disk surface significantly is affected by the ambient temperature,which is caused melt too fast by 10 ℃; the heat generated by friction of polishing area is smaller than the convective heat at- 10 ℃ of the ambient temperature,which leads to the secondary solidification of the ice disk surface; at- 10 ℃ of the ambient temperature,selfsharpening of ice disk can be achieved by adding assisted polishing slurry of ether in low temperature.