摘要
采用化学水浴法,以Zn SO4、柠檬酸钠、NH3·H2O、SC(NH2)2为反应物,在玻璃衬底上制备了Zn S薄膜,采用XRD、SEM、分光光度计、台阶仪等手段研究了水浴温度、沉积时间、p H值等条件对Zn S薄膜的晶体结构、表面形貌、光学性能的影响。结果表明,Zn S薄膜经退火后出现明显特征衍射峰,为闪锌矿结构,可见光范围内平均透过率均大于80%。经过工艺优化,在水浴温度为80℃、沉积时间为1 h、p H=10条件下沉积的Zn S薄膜表面均匀致密,可见光范围内平均透过率为89.6%,光学带隙为3.82 e V,适合做铜铟镓硒和铜锌锡硫薄膜太阳电池的缓冲层。
Zinc sulfide thin films were deposited on glass substrates by chemical bath deposition,using Zn SO4,sodium citrate, NH3· H2 O and SC( NH2)2as reactants. The influence of deposition temperature,deposition time and p H value on the structures,the surface morphologies and the optical properties of Zn S thin films were studied by XRD,SEM,spectrophotometer,and step tester. The results indicate that the diffraction peak of deposited Zn S thin film clearly appears after being annealed,which presents a sphalerite structure,and the thin films have more than 80% average transmittance in visible region. After process optimization,under the condition of 80 ℃,1 h,p H = 10,the surface of Zn S film is uniform and dense,and the average transmittance is 89. 6% in visible region,while the optical band gap is 3. 82 e V,which is suitable for buffer layer of CIGS and CZTS thin film solar cells.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2015年第3期610-615,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(61176127
61006085
11474248)
国家国际科技合作重点项目(2011DFA62380)
教育部博士点基金(20105303120002)
关键词
ZNS薄膜
缓冲层
化学浴沉积
透过率
ZnS thin film
buffer layer
chemical bath deposition
transmittance