Nd_(0.05)Bi_(0.95)FeO_3极化诱导La_(0.7)Sr_(0.3)MnO_3/Nb:SrTiO_3异质结薄膜电阻变换效应

Nd_(0.05)Bi_(0.95)FeO_3 Polarization Induced Resistive Switching in La_(0.7)Sr_(0.3)MnO_3/ Nb:SrTiO_3 Heterostructure Film

采用脉冲激光沉积等方法在Nb:Sr Ti O3衬底上分别制备了Nd0.05Bi0.95Fe O3,La0.7Sr0.3Mn O3,[Nd0.05Bi0.95Fe O3/La0.7Sr0.3Mn O3]异质结薄膜,并研究了异质结薄膜的电阻变换效应.研究显示:[Nd0.05Bi0.95Fe O3/La0.7Sr0.3Mn O3]双层结构的异质结薄膜电阻变换性能优于单层Nd0.05Bi0.95Fe O3,La0.7Sr0.3Mn O3异质结薄膜,电阻变换比值超过100,电阻状态连续可调,电阻翻转电压仅需要2 V左右,且具有较好的阻态保持性.研究揭示出[Nd0.05Bi0.95Fe O3]铁电场效应诱导La0.7Sr0.3Mn O3/Nb:Sr Ti O3的界面耗尽层宽度的变化为电阻变换增强的原因.

The Nd0. 05Bi0. 95 Fe O3,La0. 7Sr0. 3Mn O3,Nd0. 05Bi0. 95 Fe O3/ La0. 7Sr0. 3Mn O3 heterostructure films were deposited on Nb： Sr Ti O3 substrates by the pulsed laser deposition method. It is shown that the resistive switching performance of Nd0. 05Bi0. 95 Fe O3/ La0. 7Sr0. 3Mn O3 bilayer structure is better than that of Nd0. 05Bi0. 95 Fe O3,or [La0. 7Sr0. 3Mn O3]. This device exhibits resistive switching ratio of 100 and the stable resistance states can be continuously modulated with 2V reversal voltage. The mechanism of resistive switching is attributed to the Nd0. 05Bi0. 95 Fe O3ferroelectric field effect which changes the thickness of barrier at the La0. 7Sr0. 3Mn O3/ Nb： Sr Ti O3 interface.