NH_3气氛下N掺杂ZnO的制备及光电性能

Preparation and Photovoltaic Performance of N-doped ZnO in NH_3 Gas

采用自设计高温煅烧装置在NH3气氛下制备N掺杂ZnO,研究N掺杂ZnO(N-ZnO)的合成条件与ZnO带隙和光电转换效率之间的关系。通过改变NH3气压强、煅烧温度和煅烧时间得到不同N掺杂量的ZnO。采用扫描电子显微镜(SEM)、X射线粉末衍射仪(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-vis)对N-ZnO的形貌、晶体结构、掺杂价态以及光学性质进行分析。结果表明:N-ZnO为六方纤锌矿结构,N掺杂有效窄化ZnO带隙,导致其紫外-可见吸收光谱的吸收带边红移,以其为光阳极的染料敏化太阳能电池的光电转换效率从0.34%提高至1.02%。

N-doped ZnO（N-ZnO）was prepared with self-designed high temperature annealing devices in NH3 gas.The relationship between preparation condition,band gap,and photovoltaic conversion efficiency of N-ZnO was investigated.ZnO with different N doping concentration was obtained by varying NH3 gas pressure,annealing temperature,and annealing time.The morphology,structure,chemical compositions and optical property of N-ZnO were characterized by scanning electron microscope（SEM）,X-ray diffraction analysis（XRD）,X-ray photoelectron spectroscopy（XPS）and UV-visible absorption spectroscopy（UV-vis）.The results show that N-ZnO possesses a hexagonal wurtzite structure.N doping effectively leads to narrowing of band gap and a red shift of the absorption edge of ZnO.The photovoltaic conversion efficiency of dye-sensitized solar cell based on N-ZnO photoanode can be improved from 0.34%to 1.02%.