基于PSpice的SiC MOSFET的关键参数建模

SiC MOSFET Modeling Based on Key Parameters of PSpice

分析研究了SiC金属氧化物半导体场效晶体管(MOSFET)各参数与其动、静态特性的内在关系,提出了一种基于PSpice的SiC MOSFET建模新方法。通过引入电压控制电压源对栅极阈值电压进行补偿修正,采用两种不同的结电容模型描述各端电压不同而带来的结电容的变化,并同时增加了MOSFET的漏源电阻、栅极电阻随温度变化的变温度子模型。新模型可全面准确反映SiC MOSFET的动、静态特性,为SiC MOSFET的开关过程分析、损耗计算及主电路设计提供了重要依据。

This paper analyzes the various parameters studied SiC metal-oxide-semiconductor field-effect transistor （MOSFET） with its static and dynamic characteristics intrinsic relationship presents a PSpice the SiC MOSFET-based modeling method.By introducing a voltage controlled voltage source E-door threshold voltage to compensate for ex- treme correction, using two different junction capacitance model describes the changes brought about various different terminal voltage junction capacitance and simultaneously increases the MOSFET drain-source resistance of the gate re- sistance variation with temperature changes the temperature of the sub-models.The new model can accurately reflect the overall SiC MOSFET static and dynamic characteristics of SiC MOSFET switching process analysis, calculation of losses and main circuit design provides an important basis.