一种新型MEMS压阻式SiC高温压力传感器

A Novel MEMS Piezoresistivity SiC High Temperature Pressure Sensor

提出采用SiC材料来构造特殊环境下使用的MEMS压阻式高温压力传感器。分析了国际上特种高温压力传感器发展的主流趋势和技术途径,根据该领域应用需求、SiC材料特点和成本的多方权衡,开发了压阻式SiC高温压力传感器。通过理论模型结合ANSYS软件进行敏感结构的仿真和设计,解决了SiC压力传感器加工工艺中材料刻蚀、耐高温金属化、敏感电阻制备等关键技术难点,最终加工形成SiC高温压力传感器芯片。经过高温带电测试,加工的SiC压力传感器能够在550℃的环境温度下、700 kPa压力范围内输出压力敏感信号,传感器非线性指标达到1.054%,芯片灵敏度为0.005 03 mV/kPa/V,证明了整套技术的有效性。

A MEMS piezoresistive high temperature pressure sensor fabricated by the SiC material for the special environment was presented.The main development trend and technological approaches of the high temperature pressure sensors at home and abroad were analyzed.The piezoresistive SiC high temperature pressure sensor was developed according to the trade-off of the application requirement,SiC material characteristics and cost.By the theoretical model combined with ANSYS software,the simulation and design of the sensitive structure were carried out,the key technical problems in the fabrication process of the SiC pressure sensor were solved,such as the material etching,high temperature metallization,and sensitive resistance preparation.Finally,the SiC high temperature pressure sensor chip was fabricated.Through the high temperature electric test,the fabricated SiC pressure sensor can output the pressure sensitive signals in the range of 700 kPa at 550 ℃,the nonlinearity value of the sensor reaches 1.054%,the chip sensitivity reaches 0.005 03 mV/kPa/V.The validity of the technology was verified.