氮化铁薄膜中反常霍尔效应的研究

Anomalous Hall Effect of Iron Nitride Thin Films

通过磁控溅射方法制备了氮含量不同的氮化铁薄膜,观察到随着氮含量的增加,薄膜的导电机制从金属到半导体的转变。霍尔电阻的测量表明在高电阻区域反常霍尔电阻率与纵向电阻率的标度律为线性,即反常霍尔效应遵循斜散射机制,但相应的反常霍尔电导率与纵向电导率的关系不总是线性。

Iron nitride thin films with different nitrogen content were fabricated using magnetron sputtering.With the increasing of nitrogen content, a transition of transport mechanism o{ the film from metallic to hopping conduction was observed. Hall resistance measurements showed that the scaling law between anomalous Hall resistivity and longitudinal resistivity was linear in the dirty regime, but the corresponding relationship between anomalous Hall conductivity and longitudinal conductivity was not always linear.