GaAs/Ge太阳电池电子辐射效应的移位损伤剂量分析

Using displacement damage dose to analyze electron irradiation effects on GaAs/Ge solar cells

引入移位损伤剂量,对国产空间用GaAs/Ge太阳电池电子的辐射效应进行研究分析。首先计算电子在电池中的非电离能损(non-ionizing energy loss,NIEL)值,再用其与电子辐射注量的相乘,得到相应的移位损伤剂量(displacement damage dose,Dd),并对不同能量电子辐射下GaAs/Ge太阳电池最大输出功率Pmax随Dd的衰降曲线进行修正。分析结果表明:用Dd代替辐射注量,可使不同能量电子辐射引起的GaAs/Ge太阳电池Pmax的衰降能用单一曲线来描述。由此,通过NIEL值的计算和相对少的电子实验数据,就可确定太阳电池Pmax的衰降曲线,能够方便地预测在轨任务太阳电池的工作寿命。

The concept of displacement damage dose is used to analyze the irradiation effects of 1.0,1.8and 11.5MeV electrons on homemade GaAs/Ge solar cells.The non-ionizing energy loss（NIEL）for each electron is caculated in GaAs cells,and then the corresponding displacement damage dose could be obtained.It is found that with the aid of displacement damage dose,the degradation of Pmaxof GaAs/Ge solar cells induced by various energies could be characterized with a simple curve.The result of the approach is a determination of a single characteristic degradation curve for a cell technology,which is measured against displacement damage dose rather than fluence by means of a calculation of NIEL and relatively few experimental measurements.The end-of-life（EOL）cell performance for a particular mission can be read from the characteristic curve once the displacement damage dose for the mission has been determined.