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一种输出匹配可调的、高线性度宽带功率放大器 被引量:1

A Tunable Output Matching and High Linearity Broadband Power Amplifier
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摘要 采用自适应偏置技术和有源电感实现了一款输出匹配可调的、高线性度宽带功率放大器(PA)。自适应偏置技术抑制了功放管直流工作点的漂移,提高了PA的线性度。有源电感参与输出匹配,实现了输出匹配可调谐,该策略可调整因工艺偏差、封装寄生造成的输出匹配退化。利用软件ADS对电路进行验证,结果表明,在4 GHz频率下,输入1dB压缩点(Pin 1dB)为-7dBm,输出1dB压缩点(Pout 1dB)为11dBm,功率附加效率(PAE)为8.7%。在3.1GHz^4.8 GHz频段内,增益为(20.3±1.1)d B,输入、输出的回波损耗均小于-10dB。 A broadband power amplifier( PA) was designed by adopting adaptive bias technique and active inductor.Adaptive bias technique effectively enhanced the power amplifier linearity by inhibiting DC operation point drifting of transistor. Active inductor participated in output matching realized output matching tuneability,this scheme could adjust output matching degradation due to process deviation and packaging parasitics. The PA was verified by simulation tool ADS. The results indicated the power amplifier had input 1dB compression point( Pin 1dB) of- 7dBm,output 1dB compression point( Pout 1dB) of 11d Bm at 4 GHz,and power added efficiency( PAE) of 8. 7%. Over the frequency range of 3. 1 GHz ~ 4. 8 GHz,the power amplifier showed a gain of 20. 3dB with the gain flatness of 1. 1d B,the input and output return loss are all less than- 10dB.
出处 《电子器件》 CAS 北大核心 2015年第2期321-326,共6页 Chinese Journal of Electron Devices
基金 北京市自然科学基金项目(4142007) 山东省高等学校科技计划项目(J13LN09)
关键词 功率放大器 线性度 输出匹配 自适应偏置 有源电感 power amplifier linearity output matching adaptive bias active inductor
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参考文献12

  • 1韦小刚,吴明赞,李竹.提高共源共栅CMOS功率放大器效率的方法[J].电子器件,2011,34(2):184-186. 被引量:2
  • 2徐长久,孙玲玲,文进才,余志平.1.95GHz Doherty功率放大器设计[J].电子器件,2011,34(2):172-175. 被引量:3
  • 3RueyLue Wang, Yan Kuin Su, ChienHsuan Liu. 3 GHz - 5 GHz Cascoded UWB Power Amplifier [ C ]//Proc IEEE Circuits and Systems. Singapore ,2006:367-369.
  • 4Siti Maisurah,Wong Sew Kin,Fabian Kung,et al. 0.18 m CMOS Power Amplifier for UWB System[ C]//Proc Wireless and Optical Communications Networks. Singapore, 2007 : 1-4.
  • 5Sajay Jose, Hyung-Jin Lee, Dong Ha, et al. A Low-power CMOS Power Amplifier for UWB Applications [ C ]//Proc IEEE Circuits and Systems. Blacksburg, Virginia, 2005 : 5111-5114.
  • 6Diebold S, Massler H,Tessmann A, et al. 140 GHz Solid-State Am-plifier with On-Chip Tunable Output Matching[ C ]//Proc of Inte- grated Nonlinear Microwave and Millimetre-Wave Circuits. Vienna,2011 : 18- 19.
  • 7彭艳军,宋家友,王志功.HBT MMIC功率放大器的自适应线性化偏置技术[J].中国集成电路,2006,15(11):32-37. 被引量:12
  • 8Hector Solar, Roc Berenguer, Unai Alvarado, et al. Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802. lla WLAN Standard with on-Chip" Power Inductors" [ C ]//Proc of IEEE Mqqx3 International Microwave. San Francisco, California, USA, 2006: 1875-1878.
  • 9郭振杰,张万荣,金冬月,谢红云,丁春宝,邢光辉,路志义,张瑜洁.基于有源电感的全集成超宽带低噪声放大器[J].微电子学,2013,43(3):316-320. 被引量:6
  • 10尤云霞,张万荣,金冬月,谢红云,沈珮,陈亮,丁春宝,孙博韬.基于SiGe HBT的射频有源电感的设计[J].电子器件,2010,33(4):424-427. 被引量:3

二级参考文献58

  • 1吉小冬,孙玲,包志华.基于0.6 μm CMOS工艺的单片集成有源电感设计[J].中国集成电路,2006,15(8):49-52. 被引量:2
  • 2支传德,杨华中,汪蕙.CMOS射频功率放大器的设计方法[J].电子技术应用,2006,32(9):1-3. 被引量:2
  • 3支传德,杨华中.射频包络消除与恢复功率放大器性能分析[J].Journal of Semiconductors,2007,28(4):582-586. 被引量:5
  • 4[1]T.Fowler,K.Burger,et al.Efficiency improvement techniques at low power levels for linear CDMA and WCDMA power amplifies[A],Proc.IEEE RFIC Symp.[C],2002:41-44.
  • 5[2]T.Yoshimasu,M.Akagi,et al.An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications[J],IEEE J.Solid State Circuits,1998,33(9):1290-1296.
  • 6[3]H.Kawamura,K.Sakuno,et al.A miniature 44% efficiency GaAs HBT power amplifier MMIC for the W-CDMA application[A],IEEE GaAs IC Symp.Tech.Dig.[C],2000:25-28.
  • 7[4]Y.S.Noh and C.S.Park,PCS/W-CDMA dual band MMIC power amplifier with a newly proposed linearizing bias circuit[J],IEEE J.Solid-State Circuits,2002,37(9):1096-1099
  • 8[5]K.Fujita,K.Shirakawa,et al.A 5 GHz high efficiency and low distortion InGaP/GaAs HBT power amplifier MMIC[A],IEEE MTT-S Microwave Symp.Dig.[C],2003:871-874.
  • 9[6]Joon H.Kim,Ji H.Kim,et al.An InGaP/GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets[J],IEEE J.Solid-State Circuits,2003,38(6):905-910
  • 10[7]Y.S.Nob,Ji.H.Kim,MMIC power amplifier with on-chip bias current controlling circuit for W-CDMA mobile handset[J],Eleetronics Letters 2002,38(25):1686-1688.

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