摘要
为简化电路结构,提高精度和降低功耗,提出了一种新型过温保护电路。该电路无需基准电压和比较器,利用PTAT电流源的正温度系数特性,对温度进行检测,同时设计迟滞回路,避免了热震荡的发生。基于HHNEC的0.35μm BCD工艺实现,在电源电压为3V^5.5V下进行测试结果表明,该电路热关断温度为165℃,温度迟滞量为15℃,误差为1℃,与仿真结果一致,可以广泛应用于功率集成芯片中。
A novel thermal protection circuit is proposed in order to simplify the circuit structure,improve the accuracy and reduce power consumption. The novel thermal protection circuit utilizes the positive temperature coefficient to scale the temperature without any bandgap reference or comparator. Besides,the designed hysteresis function was achieved by the feedback circuit. Based on the HHNEC 0. 35μm BCD process,the circuit is fabricated,the experimental results show that the thermal shutdown temperature is 164 ℃ and the thermal shutdown hystersis is 15 ℃,the Error is less than 1 ℃. The circuit presented in this paper is suitable for many Power ICs.
出处
《电子器件》
CAS
北大核心
2015年第2期373-376,共4页
Chinese Journal of Electron Devices
