Ag的掺杂量对Zn_(0.5)Cd_(0.5)S/Ag半导体材料光催化性能的影响

Influence of amount of Ag on the photocatlytic properties of Zn_(0.5)Cd_(0.5)S/Ag

采用燃烧法制备了Zn0.5Cd0.5S/Ag半导体材料.利用X-射线粉末衍射仪(XRD),扫描电子显微镜(SEM),荧光分光光度计(PL)以及紫外-可见分光光度计(UV-vis)对所制备得到的样品进行了表征.研究了Ag的掺杂量对Zn0.5Cd0.5S/Ag半导体材料的结构、形貌、发光性能和光催化效果的影响.结果表明,Ag的掺杂量对样品的形貌基本没有影响,但是对样品的结构、发光性能以和光催化效果有着显著地影响.研究表明:随着Ag掺杂量的增加,半导体材料中出现了AgS杂相;另外,样品的发光强度逐渐降低;而当Ag的掺杂量为0.1时,所制备的Zn0.5Cd0.5S/Ag半导体材料对亚甲基蓝溶液(MB)的光催化效果最好.

Zn0 .5 Cd0 .5 S/Ag photocatalysts were synthesized by a combustion method .The as‐synthe‐sized samples were characterized by X‐ray powder diffraction （XRD） ,Scanning electron microscopy （SEM） ,Photoluminescence （PL） and ultraviolet‐visible spectrophotometer （UV‐vis） .The influences of amount of Ag on the structure ,morphology ,photoluminescence and photocatalytic properties of Zn0 .5 Cd0 .5 S/Ag with different adding amounts of Ag were studied .The results show that using amount of Ag has no effect on the morphology of samples ,but it has significantly influence on the structure ,lumines‐cent and photocatalytic performance .As the content of Ag increased ,the phase of AgS was appeared . When the adding amounts of Ag is 0 .1 ,the photocatalytic properties of Zn0 .5 Cd0 .5 S/Ag is the best .