InGaN/GaN多量子阱LED的电特性研究

Electric Characteristics for InGaN/GaN Multiple Quantum-well LEDs

针对InGaN/GaN多量子阱LED,分析了占据能态高于势垒的载流子和低于势垒的载流子参与的电流输运机制,从而推导出对应能态电流输运机制下的电流-电压关系,以及理想因子与温度的变化规律。实验结果证实,在低注入强度下,由材料缺陷引入的深能级辅助隧穿输运机制占主导,电流电压特性符合相应的推导结果,随着注入强度的增大,参与扩散-复合输运机制的载流子逐渐增加,温度对输运机制的影响逐渐增大。

In view of the InGaN/GaN multiple quantum-well LEDs, the current transport mechanisms of the carries whose occupied states are above and below the potential energy barrier were analyzed, further the current-voltage characteristic in corresponding current transport mechanisms and the variations of idealilty factor and temperature were derived. Experimental results reveal that at low current injection, the deep-level-assisted tunneling transport mechanism introduced by material defects dominates and the current-voltage characteristics consist with the theoretical analysis. With the current injection increasing, the number of carriers participating in diffusion-carrier recombination transport mechanism gradually increases, consequently the effect of temperature on the transport mechanism also gradually increases.