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LPCVD氮化硅淀积工艺铁离子沾污研究

Study on the Fe Contamination in the Nitride Deposition by LPCVD
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摘要 采用表面光电压技术研究了低压化学气相淀积(LPCVD)法氮化硅淀积工艺的Fe离子沾污。研究表明,在氮化硅淀积工艺中,NH3和SiH2Cl2气体是Fe离子沾污的主要来源。通过对氮气进一步纯化处理、提高NH3和SiH2Cl2气体纯度和更换传输气体的金属管路等措施,氧化工艺Fe离子沾污减少了一个数量级。 The Fe contamination in the nitride deposition by low pressure chemical vapor deposition （LPCVD） was investigated by the surface photo-voltage （SPV） technique. The result shows that the ammonia （NH3） and dichlorosilane （SiH2Cl2） gas are the main source for the serious Fe contamination in the nitride deposition process. The Fe contamination in nitride deposition process can be reduced by one order of magnitude by means of purifying the nitrogen, reducing the content of trace impurity in the NH3 and SiH2Cl2, renewing stainless steel pipeline for transmitting oxygen and nitrogen, etc.
作者 廖乃镘 赵志国 阙蔺兰 向华兵 李贝 李仁豪
机构地区 重庆光电技术研究所 中国国防科技信息中心
出处 《半导体光电》 CAS 北大核心 2015年第1期63-65,70,共4页 Semiconductor Optoelectronics
关键词 铁离子沾污 氮化硅 低压化学气相淀积 表面光电压 iron contamination nitride LPCVD SPV
分类号 TN305 [电子电信—物理电子学]
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参考文献9

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二级参考文献16

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半导体光电
2015年 第1期

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