摘要
室温下,采用脉冲直流反应磁控溅射技术在玻璃衬底上制备了氧化钒薄膜.研究了脉冲调制功率占空比对薄膜物相、表面形貌、组分和热敏电学性能的影响.X射线衍射测试结果表明在室温及不同占空比下生长的氧化钒薄膜均为非晶结构;原子力显微镜表面形貌测试表明降低占空比可以得到更加光滑的薄膜表面;X射线光电子能谱测试表明降低占空比能够在反应溅射气氛不变的情况下促进钒的氧化;对薄膜的热敏电学特性测试发现,在293～368 K,小极化子跳跃是脉冲反应磁控溅射氧化钒薄膜中主要的导电机制.
Vanadium oxide （VOx） thin films were prepared on glass substrates at room temperature by pulsed dc reactive magnetron sputtering. The effects of the duty cycle of the pulsed power on the crystallinity, surface morphology, composition and thermal sensitive electrical properties were investigated. X-ray diffraction results show that the VOx films deposited under different duty cycles were all amorphous. Atomic force microscopy （AFM） characterization of the surface morphology show that a smoother surface can be obtained by decreasing the duty cycle. X-ray photoemission spectroscopy analysis reveales that under the same reactive sputtering atmosphere, decreasing the duty cycle favors to enhance the oxidation of the vanadium. Measurements on the thermosensitive electrical properties indicate that the small polaron hopping is the main electrical conductivity mechanism for the VOx films deposited by pulsed dc reactive magnetron sputtering in the temperature range of 293-368 K.
出处
《半导体光电》
CAS
北大核心
2015年第1期66-70,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61235006)
