摘要
Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.
Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.
