效率达19.1%的全离子注入单晶硅太阳电池

ALL-ION-IMPLANTED SINGLE CRYSTALLINE SILICON SOLAR CELLS UP TO EFFICIENCY OF 19.1%

基于PESC(钝化发射极太阳电池)的电池结构,制备发射极为磷离子注入、背面场为硼离子注入的全离子注入单晶硅太阳电池,分析磷和硼离子注入的退火特性和杂质分布以及离子注入硼背场对电池性能的影响,并与常规POCl3扩散发射极电池进行对比。研究表明:离子注入的硼背场可明显提高电池的长波响应,使电池的开路电压提高约100 m V,效率提高5.4%;与POCl3扩散发射极电池相比,磷离子注入发射极改善了电池的短波响应,使电池效率提高0.8%;全离子注入电池的效率达到19.1%。

The all-ion-implanted single crystalline silicon solar cell with the phosphorous-implanted emitter and boron- implanted back surface field （BSF）was prepared based on the PESC structure. The annealing properties and the doping profiles for the implanted phosphorous and boron, and the effect of boron-implanted BSF on the solar cell performance were analyzed. Additionally, the solar cell was compared with solar cell with conventional POC13 diffused emitter. The results show that the boron-implanted BSF improves long-wavelength response, and makes the open circuit voltage increase by 100 mV and the efficiency increase by 5.4%. The phosphorous-implanted emitter improves the short- wavelength response and makes the efficiency increase by 0.8% absolutely. The efficiency of all-ion-implanted solar cells reaches up to 19.1%.