摘要
研究了硅在SiCl4/TMAC-PC体系中的阴极沉积过程,分析了电解质体系的热稳定性和电导率,研究电流密度、温度等因素对沉积层表面形貌的影响。结果表明,SiCl4的加入使得TMAC-PC体系热稳定性增强,电解质的电导率随温度的升高而增大,在318K、c(SiCl4)=0.5mol/L、电流密度i=15A/m2、电沉积时间3h条件下得到的沉积层致密,呈球形颗粒状。
Cathodic deposition process of silicon in SiCl4/TMAC-PC system was analyzed by electrical conductivity and thermal stability of electrolyte system. The effect of current density, temperature and etc. on surface morphology of deposited layer were studied. The results show that thermal stability of TMAC-PC system is enhanced by SICl4 addition and electrical conductivity of electrolyte rises with increase of temperature. The sphere shape and densification deposited layer are formed under the conditions including temperature of 328 K, c（SiCl4）=0.5 tool/L, current density of 15 A/m^2 and deposition time of 3h.
出处
《有色金属（冶炼部分）》
CAS
北大核心
2015年第5期66-70,共5页
Nonferrous Metals（Extractive Metallurgy)
基金
河北省自然科学基金资助项目(E2013501121)
关键词
离子液体
电沉积
硅
ionic liquid
electro-deposition
silicon
