基于新型分离输出拓扑结构的SiC-MOSFET功率模块应用

Application of SiC MOSFET-Based Power Modules Using Split Output Topology

高频化和高功率密度化是电力电子装置发展的趋势,其中最核心的技术就是电力电子器件的高频化。随着应用中开关频率的进一步提高,SiC金属氧化物半导体场效应晶体管(SiCMOSFET)的体二极管正在成为瓶颈。SiC-MOSFET体二极管相对于SiC肖特基二极管,仍然偏大。介绍了一种新型的分离输出拓扑结构,在开关状态下,屏蔽体二极管的导通,降低反向恢复电流,从而降低SiC-MOSFET的开通损耗,同时抑制桥臂直通的风险。使用安捷伦功率器件分析仪B1505A对M34x功率模块进行了性能和效率测试,用VincotechISE软件对典型光伏逆变器的效率进行仿真分析。

High switching frequency and high power density are a trend in the power electron- ics development, especially as new wide band-gap components are released. With the increase of switching frequency, the body diode of SiC MOSFET becomes a bottleneck. The body diode＇s re- verse recovery charge of SiC MOSFET is lower than that of Si MOSFET, but still not as low as SiC Schottky diodes. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. The performance and efficiency curves of power module Ma4x are measured with Agilent＇s power device analyzer B1505A. With the practical curve meas- ured from the B1505A, efficiency simulation of an inverter based on the M34x power modules is done by using the simulation software VincotechISE.