发展中的SiCOI技术

The Developing Technology for Silicon Carbide on Insulator

Si COI技术是 Si C材料与 SOI技术结合而形成的一种新的微电子技术 ,它的产生与发展不仅推动 Si C半导体技术的发展 ,还将弥补 Si SOI技术应用的局限性 ,并将在高温、高频、大功率、抗辐射等电子学领域得到应用和发展。文章介绍了近年来 Si

As a new microelectronics technology formed by combining SiC with SOI technology, SiCOI technology is anticipated to accelerate the development and application of SiC and enhance existing Si SOI technology It is a promising technology for many applications, such as high temperature, high power, high frequency and radiation hardening devices The latest development of SiCOI technology is presented and evaluated in the paper