InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性

Transient photovoltaic responses in InAs/GaSb type-Ⅱ superlattice infrared photodetectors

报道了InAs/GaSb二类超晶格红外探测器的瞬态光伏响应特性.通过对p-b-i-n二类超晶格探测器对皮秒脉冲激发的瞬态响应特性的分析及拟合,获得了器件的表观少数载流子的寿命.并对不同尺寸台面结构单元器件进行测试分析,发现少数载流子寿命随着台面面积的增大而增大,归结为由于侧壁表面效应带来的影响.所测器件的少数载流子为空穴,其表观寿命约为2~12 ns.

The transient photovoltaic responses in InAs/GaSb type- Ⅱ superlattice infrared photodetectors under picosec- ond pulsed laser illumination are reported. By analyzing the dynamic processes in the transient response curves of the p- b-i-n structured type-Ⅱ superlattice detectors, the apparent carrier lifetime can be obtained. A series of single element devices with different mesa areas have been investigated. The minority carrier lifetime trends to increase as the mesa area increases, implying a reduced surface recombination resulted from the un-passivated side-walls of the mesa. The investi- gated minority carriers are attributed to holes, with the apparent lifetime in the range 2 - 12 ns.