摘要
利用真空蒸镀的方法制备了结构为:ITO/m-MTDATA(20 nm)/NPB(15 nm)/DPAVBi:Rub(x nm,2%)/Alq3(25 nm)/Li F(0.5 nm)/Al(100 nm)的器件.研究了掺杂层的不同厚度(x=15,25和30 nm)对器件性能的影响.结果是当掺杂层的厚度为25 nm时,器件的性能最好.当电流密度为524.22 m A/cm2时,获得最大电流效率,为4.37 cd/A;获得最大亮度,为22 890 cd/m2.器件的高亮度与高效率主要是因为主客体之间的能量转移很充分.
The OLED devices were fabricated with the sturcture of ITO/m-MTDATA( 20 nm )/NPB( 15 nm )/DPAVBi:Rub( x nm,2%)/Alq3(25 nm)/LiF(0. 5 nm)/Al(100 nm)by using the method of vacuum evaporation. The performances of the devices were studied by adjusting the the different thickness(x=15,25 and 30 nm)of the yellow light emission layer( DPAVBi:Rub). When the thickness is 25 nm,the performance of the device is the best. The maximum luminous efficiency is 4. 37 cd/A and the maximum luminance is 22 890 cd/m2 when the current density is 524. 22 mA/cm2 . The energy transfer between the host and the guest is so sufficient that the devices have the high luminance and efficiency.
出处
《吉林师范大学学报(自然科学版)》
2015年第2期1-3,共3页
Journal of Jilin Normal University:Natural Science Edition
基金
国家自然科学基金项目(50772016)
吉林省科技发展计划项目(20100510
20101512
201215221)
吉林省教育厅"十二五"科学技术研究项目(2011154
2012175
2012176
2013208)
关键词
性能
效率
亮度
能量转移
performance
efficiency
luminance
energy transfer