摘要
We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.
We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.
基金
Project supported by the National Natural Science Foundation(Nos.61176128,61376081)
the Knowledge Innovation Project of the CAS(No.Y2BAQ11001)
the SINANO SONY Joint Program(Nos.Y1AAQ11002,Y2AAQ11004)
