摘要
It was demonstrated that heavy ions can induce large current-voltage （I-V） characteristics shift in commercial trench power MOSFETs, named single event microdose effect （SE-microdose effect）. A model is pre- sented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET＇s I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment＇s data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.
It was demonstrated that heavy ions can induce large current-voltage （I-V） characteristics shift in commercial trench power MOSFETs, named single event microdose effect （SE-microdose effect）. A model is pre- sented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET＇s I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment＇s data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.
