摘要
The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.
The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.
基金
Project supported by the National Natural Science Foundation of China(Nos.61274077,61474031)
the Guangxi Natural Science Foundation(No.2013GXNSFGA019003)
the Guangxi Department of Education Project(No.201202ZD041)
the Guilin City Technology Bureau(Nos.20120104-8,20130107-4)
the China Postdoctoral Science Foundation Funded Project(Nos.2012M521127,2013T60566)
the National Basic Research Program of China(Nos.2011CBA00605,2010CB327501)
the Innovation Project of GUET Graduate Education(Nos.GDYCSZ201448,GDYCSZ201449)
the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC(No.KFJJ201205)
the Guilin City Science and Technology Development Project(Nos.20130107-4,20120104-8)
