摘要
We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing （RTA）. Sharp film-substrate interfaces were confirmed by scanning elec-tron microscopy （SEM）. The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm^2 at a bias voltage of -1 V under illumination by a 5 mW, 1.31 μm laser, and the dark current density was approximately 0.537 mA/cm^2. The detectivity was estimated to be 8.8×10^9 cmHzl/2/W at 1.31 μm. All of the measurements were made at room temperature. The results suggest that the p-β-FeSiE/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.
We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing （RTA）. Sharp film-substrate interfaces were confirmed by scanning elec-tron microscopy （SEM）. The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm^2 at a bias voltage of -1 V under illumination by a 5 mW, 1.31 μm laser, and the dark current density was approximately 0.537 mA/cm^2. The detectivity was estimated to be 8.8×10^9 cmHzl/2/W at 1.31 μm. All of the measurements were made at room temperature. The results suggest that the p-β-FeSiE/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.
基金
Project supported by the National Natural Science Foundation of China(No.51177134)
