偏压加强MPCVD法Ir(100)/MgO(100)基片上金刚石异质外延形核

Heteroepitaxial Nucleation of Diamond on Ir(100)/MgO(100) Substrate by Bias Enhanced Microwave Plasma Chemical Vapor Deposition Method

利用自行研制的可调谐圆柱谐振腔式微波等离子体化学气相沉积（MPCVD）装置的结构优势,设计了电极可调节的偏压加强MPCVD装置。采用脉冲激光沉积（PLD）法制备了Ir（100）/MgO（100）基片。采用偏压加强MPCVD装置进行了金刚石异质外延形核的探索,在Ir（100）/MgO（100）基片上实现了金刚石异质外延形核。扫描电镜结果显示,[100]取向的金字塔状外延金刚石晶粒的形核密度达108~109cm-2。

Using the structural advantages of the self-developed cylindrical cavity type microwave plasma chemical vapor deposition（ MPCVD） reactor,a bias-enhanced MPCVD reactor with its biasing electrode being adjustable was designed. Ir（ 100） / MgO（ 100） substrates were prepared by the pulsed laser deposition（ PLD） method. Heteroepitaxial nucleation of diamond on the Ir（ 100） / MgO（ 100） substrates was investigated,and a nucleation density of 10^8-10^9cm^-2with pyramidal diamond particles epitaxial grown on the substrates was realized.