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碳化硅陶瓷密封材料上沉积复合金刚石薄膜 被引量:4

Synthesis of Integrated Composite Diamond Film on Silicon Carbide Ceramic Sealing Material
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摘要 利用直流辉光等离子体化学气相沉积(DC-GD CVD)设备在碳化硅(SiC)密封材料上沉积复合金刚石薄膜(ICD)。实验通过两步工艺,先在SiC上沉积一层微米金刚石薄膜(MCD),然后再沉积一层纳米金刚石薄膜(NCD)形成复合金刚石薄膜(ICD)。通过场发射扫面电镜和拉曼测试,研究了MCD、NCD和ICD薄膜的表面形貌和材料结构。各种金刚石薄膜利用轮廓仪、划痕测试和摩擦磨损测试其力学性能。结果显示ICD薄膜既有较强的结合力,其摩擦系数也较低。ICD薄膜涂层的SiC密封环的摩擦系数为0.08~0.1。 The integrated composite diamond films( ICD) was synthesized on silicon carbide( SiC)ceramic sealing material by direct current glow discharge chemical vapor deposition( DC-GDCVD). A two step process syntheses of integrated composite diamond films( ICD) were used. The morphology and structure of diamond films were observed by field-emission scanning electron microscope( FESEM) and Raman spectroscopy( RS). The mechanical properties of diamond films were measured by the surface profilometer,micro-scratch tests and UMT-3 tribometer. The results show that ICD films not only exhibits high adhesion,but also exhibits smooth surface and low friction coefficient. The friction coefficient is found to be 0. 08 ~ 0. 1 in ICD films coated SiC pump seal.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第4期993-997,共5页 Journal of Synthetic Crystals
基金 国家自然科学基金(11175137 A050610)
关键词 碳化硅 金刚石薄膜 等离子体化学气相沉积 摩擦系数 silicon carbide diamond film plasma chemical vapor deposition friction coefficient
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